Solid-state image sensing device including solid-state image sensor having a pillar-shaped semiconductor layer

ABSTRACT

It is an object to provide a CCD solid-state image sensor, in which an area of a read channel is reduced and a rate of a surface area of a light receiving portion (photodiode) to an area of one pixel is increased. There is provided a solid-state image sensor, including: a first conductive type semiconductor layer; a first conductive type pillar-shaped semiconductor layer formed on the first conductive type semiconductor layer; a second conductive type photoelectric conversion region formed on the top of the first conductive type pillar-shaped semiconductor layer, an electric charge amount of the photoelectric conversion region being changed by light; and a high-concentrated impurity region of the first conductive type formed on a surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from a top end of the first conductive type pillar-shaped semiconductor layer by a predetermined distance, wherein a transfer electrode is formed on the side of the first conductive type pillar-shaped semiconductor layer via a gate insulating film, a second conductive type CCD channel region is formed below the transfer electrode, and a read channel is formed in a region between the second conductive type photoelectric conversion region and the second conductive type CCD channel region.

RELATED APPLICATIONS

This application is a continuation of PCT/JP2007/074961, filed on Dec.26, 2007. The entire content of this application is incorporated hereinby reference.

BACKGROUND OF THE INVENTION

The present invention relates to a solid-state image sensor, asolid-state image sensing device, and a method of producing the same,and in particular, to a CCD solid-state image sensor, a CCD solid-stateimage sensing device, and a method of producing the same.

A conventional solid-state image sensor used in a video camera or thelike, in which light sensing elements are arranged in matrix form,includes, between light sensing element lines, a vertical charge coupleddevice (Vertical CCD: Charge Coupled Device) for reading signal chargesgenerated by the light sensing element lines.

A structure of the aforementioned conventional solid-state image sensorwill be described in the following (refer to, for example, PatentDocument 1). FIG. 1 is a sectional view showing a unit pixel of theconventional solid state-image sensor. A photodiode (PD) are composed ofan n-type photoelectric conversion region 13 which is formed in a p-typewell region 12 formed on an n-type substrate 11 and functions as acharge storage layer, and a p⁺-type region 14 formed on the n-typephotoelectric conversion region 13.

An n-type CCD channel region 16 is formed in the p-type well region 12as an n-type impurity region. There is provided a read channel formed bya p-type impurity region between the n-type CCD channel region 16 andthe photodiode on the side of reading the signal charge to the n-typeCCD channel region 16. The signal charge generated in the photodiode isread through the read channel after being temporarily stored in then-type photoelectric conversion region 13.

There is provided a p⁺-type isolation region 15 between the n-type CCDchannel region 16 and other photodiodes. By the p⁺-type isolation region15, the photodiodes and the n-type CCD channel region 16 are isolated,and respective n-type CCD channels 16 also are isolated not to touchwith each other.

A transfer electrode 18 is formed on a surface of the semiconductorsubstrate via a Si oxide film 17, which horizontally extends so as topass through between the photodiodes. Incidentally, the signal chargegenerated in the photodiode is read to the n-type CCD channel region 16through a read channel below a transfer electrode to which a read signalis applied among the transfer electrodes 18.

A metal shield film 20 is formed on the surface of the semiconductorsubstrate in which the transfer electrode 18 is formed. The metal shieldfilm 20 includes a metal shield film opening 24 for every photodiode asa light transmitting portion which transmits the light received by thep⁺-type region 14 acting as a light receiving portion.

Patent Document 1; Japanese Unexamined Patent Publication (Kokai) No.2000-101056

SUMMARY OF THE INVENTION

As described above, in the conventional solid-state image sensors, thephotodiode (PD), the read channel, n-type CCD channel region, and thep⁺-type isolation region are formed in a plane, and thus there has beena limitation in increasing a ratio of a surface area of the lightreceiving portion (photodiode) to an area of one pixel. Therefore, it isan object to provide a CCD solid-state image sensor, in which an area ofthe read channel is reduced, and the ratio of the surface area of thelight receiving portion (photodiode) to the area of one pixel isincreased.

A first aspect of the present invention is to provide a solid-stateimage sensor including: a first conductive type semiconductor layer; afirst conductive type pillar-shaped semiconductor layer formed on thefirst conductive type semiconductor layer; a second conductive typephotoelectric conversion region formed on the top of the firstconductive type pillar-shaped semiconductor layer, an electric chargeamount of the photoelectric conversion region being changed by light;and a high-concentrated impurity region of the first conductive typeformed on a surface of the second conductive type photoelectricconversion region, the impurity region being spaced apart from a top endof the first conductive type pillar-shaped semiconductor layer by apredetermined distance, wherein a transfer electrode is formed on theside of the first conductive type pillar-shaped semiconductor layer viaa gate insulating film, a second conductive type CCD channel region isformed below the transfer electrode, and a read channel is formed in aregion between the second conductive type photoelectric conversionregion and the second conductive type CCD channel region.

A second aspect of the present invention is to provides a solid-stateimage sensing device in which a plurality of solid-state image sensorsare arranged in matrix form, the solid-state image sensor including: afirst conductive type semiconductor layer; a first conductive typepillar-shaped semiconductor layer formed on the first conductive typesemiconductor layer; a second conductive type photoelectric conversionregion formed on the top of the first conductive type pillar-shapedsemiconductor layer, an electric charge amount of the photoelectricconversion region being changed by light; and a high-concentratedimpurity region of the first conductive type formed on a surface of thesecond conductive type photoelectric conversion region, the impurityregion being spaced apart from a top end of the first conductive typepillar-shaped semiconductor layer by a predetermined distance, wherein atransfer electrode is formed on the side of the first conductive typepillar-shaped semiconductor layer via a gate insulating film, a secondconductive type CCD channel region is formed below the transferelectrode, and a read channel is formed in a region between the secondconductive type photoelectric conversion region and the secondconductive type CCD channel region.

Preferably, the second conductive type CCD channel region is composed ofa second conductivity type impurity region extending in a columndirection, at least in respective portions between adjacent columns ofthe first conductive type pillar-shaped semiconductor layers, and anisolation region composed of high-concentrated impurities of the firstconductivity type is provided so that the second conductivity type CCDchannel regions may not contact with each other.

More preferably, a plurality of transfer electrodes including thetransfer electrodes formed on the side of the first conductive typepillar-shaped semiconductor layer via the gate insulating film extend ina row direction, in respective portions between the adjacent rows of thefirst conductive type pillar-shaped semiconductor layers, and arearranged at a predetermined space so as to transfer a signal chargegenerated in the solid-state image sensor along the second conductivetype CCD channel region.

A third aspect of the present invention is to provide a solid-stateimage sensing device, wherein a solid-state image sensor includes afirst conductive type semiconductor layer, a first conductive typepillar-shaped semiconductor layer formed on the first conductive typesemiconductor layer, a second conductive type photoelectric conversionregion formed on the top of the first conductive type pillar-shapedsemiconductor layer, an electric charge amount of the photoelectricconversion region being changed by light, and a high-concentratedimpurity region of the first conductive type formed on a surface of thesecond conductive type photoelectric conversion region, the impurityregion being spaced apart from a top end of the first conductive typepillar-shaped semiconductor layer by a predetermined distance, wherein atransfer electrode is formed on the side of the first conductive typepillar-shaped semiconductor layer via a gate insulating film, a secondconductive type CCD channel region is formed below the transferelectrode, and a read channel is formed in a region between the secondconductive type photoelectric conversion region and the secondconductive type CCD channel region, and wherein a plurality of sets ofthe columns of solid-state image sensors, in which a first column ofsolid-state image sensors in which a plurality of solid-state imagesensors are arranged in a first direction at a first space, and a secondcolumn of solid-state image sensors in which a plurality of solid-stateimage sensors are arranged in the first direction at the first space,and are displacedly arranged by a predetermined amount in the firstdirection with respect to the first column of solid-state image sensorsare displacedly arranged at a second space are displacedly arranged by apredetermined amount in the first direction at the second space.

Preferably, the second conductive type CCD channel region is composed ofa second conductive type impurity region which extends in the columndirection passing through between respective pillar-shaped semiconductorlayers of the adjacent columns of the first conductive typepillar-shaped semiconductor layers, at least in respective portionsbetween the adjacent columns of the pillar-shaped semiconductor layers,and an isolation region composed of high-concentrated impurities of thefirst conductivity type is provided so that the second conductivity typeCCD channel regions may not contact with each other.

More preferably, the transfer electrodes extend in the row directionpassing through between respective pillar-shaped semiconductor layers ofthe adjacent rows of the pillar-shaped semiconductor layers, inrespective portions between adjacent rows of the pillar-shapedsemiconductor layers, and are arranged at a predetermined space so as totransfer a signal charge generated in the solid-state image sensor alongthe second conductive type CCD channel region.

A fourth aspect of the present invention is to provide a method ofproducing a solid-state image sensor, including the steps of: forming afirst conductive type semiconductor layer, a first conductive typepillar-shaped semiconductor layer on the first conductive typesemiconductor layer, a second conductive type photoelectric conversionregion on the top of the first conductive type pillar-shapedsemiconductor layer, and a high-concentrated impurity region of thefirst conductive type on a surface of the second conductive typephotoelectric conversion region, the impurity region being spaced apartfrom a top end of the first conductive type pillar-shaped semiconductorlayer by a predetermined distance; forming a second conductive type CCDchannel region on the surface of the first conductive type semiconductorlayer; forming a gate insulating film on the side of the firstconductive type pillar-shaped semiconductor layer; and forming atransfer electrode on the side of the first conductive typepillar-shaped semiconductor layer via the gate insulating film, abovethe second conductive type CCD channel region.

Preferably, the step of forming the first conductive type semiconductorlayer, the first conductive type pillar-shaped semiconductor layer onthe first conductive type semiconductor layer, the second conductivetype photoelectric conversion region on the top of the first conductivetype pillar-shaped semiconductor layer, and the high-concentratedimpurity region of the first conductive type on the surface of thesecond conductive type photoelectric conversion region, the impurityregion being spaced apart from the top end of the first conductive typepillar-shaped semiconductor layer by the predetermined distance, furtherincludes the steps of: forming a semiconductor layer of the firstconductive type with a larger thickness than the first conductive typesemiconductor layer; forming a semiconductor layer of the secondconductive type on the semiconductor layer of the first conductive typewith the larger thickness than the first conductive type semiconductorlayer; forming a semiconductor layer with high-concentrated impuritiesof the first conductive type on the second conductive type semiconductorlayer; selectively etching the semiconductor layer of the firstconductive type with the larger thickness than the first conductive typesemiconductor layer, the semiconductor layer of the second conductivetype, and the semiconductor layer with high-concentrated impurities ofthe first conductivity type to form the first conductive typesemiconductor layer, the first conductive type pillar-shapedsemiconductor layer on the first conductive type semiconductor layer,the second conductive type photoelectric conversion region on the top ofthe first conductive type pillar-shaped semiconductor layer, and thehigh-concentrated impurity region of the first conductive type on theupper surface of the second conductive type photoelectric conversionregion; forming an oxide film on the surface of the first conductivetype semiconductor layer, the side of the second conductive typephotoelectric conversion region, and the side of the first conductivetype pillar-shaped semiconductor layer; depositing a masking material onthe side surface of the first conductive type pillar-shapedsemiconductor layer, the mask material being used in forming thehigh-concentrated impurity region of the first conductive type on theside surface of the second conductive type photoelectric conversionregion by ion implantation; and forming the high-concentrated impurityregion of the first conductive type on the side surface of the secondconductive type photoelectric conversion region by ion implantation.

A fifth aspect of the present invention is to provide a method ofproducing a solid-state image sensing device, including the steps of:forming a first conductive type semiconductor layer, a plurality offirst conductive type pillar-shaped semiconductor layers on the firstconductive type semiconductor layer, a second conductive typephotoelectric conversion region on the top of each of the plurality offirst conductive type pillar-shaped semiconductor layers, and ahigh-concentrated impurity region of the first conductive type on thesurface of the second conductive type photoelectric conversion region,the impurity region being spaced apart from the top end of the firstconductive type pillar-shaped semiconductor layers; forming a secondconductive type CCD channel region on the surface of the firstconductive type semiconductor layer; forming a gate insulating film onthe sides of the plurality of first conductive type pillar-shapedsemiconductor layers; and forming a transfer electrode on the sides ofthe plurality of first conductive type pillar-shaped semiconductorlayers via the gate insulating film, above the second conductive typeCCD channel region.

Preferably, the step of forming the first conductive type semiconductorlayer, the plurality of first conductive type pillar-shapedsemiconductor layers on the first conductive type semiconductor layer,the second conductive type photoelectric conversion region on the top ofeach of the plurality of first conductive type pillar-shapedsemiconductor layers, and the high-concentrated impurity region of thefirst conductive type on the surface of the second conductive typephotoelectric conversion region, the impurity region being spaced apartfrom a top end of the first conductive type pillar-shaped semiconductorlayer by a predetermined distance further includes the steps of forminga semiconductor layer of the first conductive type with a largerthickness than the first conductive type semiconductor layer; forming asemiconductor layer of the second conductive type on the semiconductorlayer of the first conductive type with the larger thickness than thefirst conductive type semiconductor layer; forming a semiconductor layerwith high-concentrated impurities of the first conductive type on thesecond conductive type semiconductor layer; selectively etching thesemiconductor layer of the first conductive type with the largerthickness than the first conductive type semiconductor layer, thesemiconductor layer of the second conductive type, and the semiconductorlayer with high-concentrated impurities of the first conductivity typeto form the first conductive type semiconductor layer, the plurality offirst conductive type pillar-shaped semiconductor layers on the firstconductive type semiconductor layer, the second conductive typephotoelectric conversion region on the top of the plurality of firstconductive type pillar-shaped semiconductor layers, and thehigh-concentrated impurity region of the first conductive type on theupper surface of the second conductive type photoelectric conversionregion; forming an oxide film on the surface of the first conductivetype semiconductor layer, the side of the second conductive typephotoelectric conversion region, and the side of the first conductivetype pillar-shaped semiconductor layer; depositing a masking materialbetween the plurality of first conductive type pillar-shapedsemiconductor layers, the mask material being used in forming thehigh-concentrated impurity region of the first conductive type on theside surface of the second conductive type photoelectric conversionregion by ion implantation; and forming the high-concentrated impurityregion of the first conductive type on the side surface of the secondconductive type photoelectric conversion region by ion implantation.

Preferably, the step of forming the second conductive type CCD channelregion on the surface of the first conductive type semiconductor layeris the steps of forming a second conductivity type impurity region onthe surface of the first conductive type semiconductor layer between theplurality of first conductive type pillar-shaped semiconductor layers,forming an isolation region composed of high-concentrated impurities ofthe first conductivity type in the second conductivity type impurityregion, and forming a second conductive type CCD channel region whichextends in the column direction at least in respective portions betweenadjacent columns of the first conductive type pillar-shapedsemiconductor layers, and is mutually-isolated.

Preferably, the step of forming the second conductive type CCD channelregion on the surface of the first conductive type semiconductor layer,further includes the steps of: forming a nitride film on the sides ofthe plurality of first conductive type pillar-shaped semiconductorlayers and the sides of the second conductive type photoelectricconversion region; forming a second conductive type impurity region onthe surface of the first conductive type semiconductor layer between theplurality of first conductive type pillar-shaped semiconductor layers;depositing a masking material for forming the isolation region which iscomposed of the high-concentrated impurities of the first conductivitytype on the second conductivity type impurity region; and forming theisolation region which is composed of the high-concentrated impuritiesof the first conductivity type in the second conductivity type impurityregion by ion implantation, whereby a second conductive type CCD channelregion which extends in the column direction at least in respectiveportions between adjacent columns of the first conductive typepillar-shaped semiconductor layers, and is mutually-isolated is formed.

More preferably, the step of forming the nitride film on the sides ofthe plurality of first conductive type pillar-shaped semiconductorlayers and the side of the second conductive type photoelectricconversion region is a step of leaving the nitride film in a sidewallspacer shape on the sides of the plurality of first conductive typepillar-shaped semiconductor layers, the side of the second conductivetype photoelectric conversion region, and the side of thehigh-concentrated impurity region of the first conductive type on thesurface of the second conductive type photoelectric conversion region,by forming the nitride film on the surface of a structure formed at theprevious step of this step to perform etch-back thereto.

The photo diode (PD), the read channel, the n type CCD channel region,and the p⁺-type isolation region are formed in a plain face, and thusthere has been a limitation in increasing the ratio of the surface areaof the light receiving (photo diode) to the area of one pixel, in theconventional CCD solid-state image sensor, but according to the presentinvention, it is possible to provide the CCD solid-state image sensor,in which an occupation area of the read channel can be greatly reducedby arranging the read channel non-horizontally, and the ratio of thesurface area of the light receiving portion (photodiode) to the area ofone pixel is increased.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of a unit pixel of aconventional solid-state image sensor;

FIG. 2 illustrates a perspective view of one CCD solid-state imagesensor in accordance with the present invention;

FIG. 3 illustrates a plan view of one CCD solid-state image sensor inaccordance with the present invention;

FIG. 4 illustrates a cross-sectional view taken from line X₁-X₁′ shownin FIG. 3;

FIG. 5 illustrates a cross-sectional view taken from line Y₁-Y₁′ shownin FIG. 3;

FIG. 6 illustrates a perspective view of CCD solid-state image sensorsarranged in matrix form;

FIG. 7 illustrates a plan view of CCD solid-state image sensors arrangedin matrix form;

FIG. 8 illustrates a cross-sectional view taken from line X₂-X₂′ shownin FIG. 7;

FIG. 9 illustrates a cross-sectional view taken from line Y₂-Y₂′ shownin FIG. 7;

FIG. 10 illustrates a perspective view of CCD solid-state image sensorsarranged in honeycomb form;

FIG. 11 illustrates a plan view of CCD solid-state image sensorsarranged in honeycomb form;

FIG. 12 illustrates a cross-sectional view taken from line X₃-X₃′ shownin FIG. 11;

FIG. 13 illustrates a cross-sectional view taken from line Y₃-Y₃′ shownin FIG. 11;

FIG. 14( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing an example of production of the solid-state image sensorin accordance with the present invention;

FIG. 14( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 15( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 15( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 16( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 16( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 17( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 17( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 18( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 18( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 19( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 19( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 20( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 20( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 21( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 21( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 22( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 22( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 23( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 23( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 24( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 24( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 25( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 25( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 26( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 26( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 27( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 27( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 28( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 28( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 29( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 29( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention;

FIG. 30( a) illustrates a cross-sectional process view taken fromX₂-X₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention; and

FIG. 30( b) illustrates a cross-sectional process view taken fromY₂-Y₂′, showing the example of production of the solid-state imagesensor in accordance with the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings.

FIGS. 2 and 3 show a perspective view and a plan view of one CCDsolid-state image sensor according to a first embodiment of the presentinvention, respectively. FIG. 4 is a cross-sectional view taken fromline X₁-X₁′ shown in FIG. 3, and FIG. 5 is a cross-sectional view takenfrom line Y₁-Y₁′ shown in FIG. 3.

A p-type well region 112 is formed on an n-type substrate 111, and ap-type pillar-shaped semiconductor layer 131 is further formed on thep-type well region 112. An n-type photoelectric conversion region 113 inwhich an amount of charge is changed by light is formed on the top ofthe p-type pillar-shaped semiconductor layer 131, and a p⁺-type region114 is further formed on the surface of the n-type photoelectricconversion region 113, while being spaced apart from the top end of thep-type pillar-shaped semiconductor layer 131 by a predetermineddistance. A light receiving portion (photodiode) 130 is formed of thep⁺-type region 114 and the n-type photoelectric conversion region 113.Transfer electrodes 118 and 119 are formed on the side of the p-typepillar-shaped semiconductor layer 131 via a gate insulating film 133. Ann-type CCD channel region 116 is formed below the transfer electrodes118 and 119. A read channel 132 is formed in a region between the n-typephotoelectric conversion region 113 on the top of the p-typepillar-shaped semiconductor layer and the n-type CCD channel region 116.Moreover, a p⁺-type isolation region 115 is formed below the transferelectrodes 118 and 119 for isolation. A metal shield film 120 isconnected to the p⁺-type region 114. An oxide film 121 is formed as aninterlayer insulation film.

When a read signal is applied to the transfer electrodes 118 or 119, asignal charge accumulated in the photodiode 130 will be read into then-type CCD channel region 116 through the read channel 132. Moreover,the read signal charge is transferred in the vertical (Y₁-Y₁′) directionby the transfer electrodes 118 and 119.

Next, a perspective view and a plan view of a part of a solid-stateimage sensing device which is the second embodiment of the presentinvention and in which a plurality of CCD solid-state image sensors ofthe first embodiment are arranged in matrix form are shown in FIGS. 6and 7, respectively.

In FIGS. 6 and 7, the solid-state image sensors having photodiodes (PDs)147, 149, and 151 which have p⁺-type regions 153, 155, and 157,respectively, are arranged on a semiconductor substrate, at apredetermined spacing (a vertical pixel pitch VP) and in the vertical(Y₂-Y₂′) direction (column direction) (a first column of solid-stateimage sensors). While being adjacent to respective solid-state imagesensors of the first column of solid-state image sensors and at the samepositions in the vertical direction, the solid-state image sensorshaving photodiodes (PD) 148, 150, 152 respectively including p⁺-typeregions 154, 156, 158 are arranged in the vertical direction at the samepredetermined spacing (vertical pixel pitch VP) as that of the firstcolumn of solid-state image sensors (a second column of solid-stateimage sensors). The first column of solid-state image sensors and thesecond column of solid-state image sensors are arranged at the samespacing (horizontal pixel pitch HP) as the vertical pixel pitch. As isunderstood, the solid-state image sensors having the photodiodes 147,149, 151, 148, 150, and 152 are arranged in so-called matrix form.

An n-type CCD channel region 160 for reading and vertically transferringthe signal charges generated in the photodiodes 147, 149, and 151 isprovided between the p-type pillar-shaped semiconductor layer of thefirst column of solid-state image sensors and the p-type pillar-shapedsemiconductor layer of the second column of solid-state image sensorswhich are adjacently arranged. Similarly, in order to read andvertically transfer the signal charges generated in other photodiodes,the n-type CCD channel regions 159 and 161 are provided. The n-type CCDchannel region is vertically extended between the p-type pillar-shapedsemiconductor layers arranged in matrix form. Moreover, p⁺-typeisolation regions 162 and 163 are provided so that the n-type CCDchannel regions may be isolated not to contact with each other. Althoughthe p⁺-type isolation regions 162 and 163 are provided along the axes ofthe first and second columns of solid-state image sensors and the outeredges of the p-type pillar-shaped semiconductor layers in the presentembodiment, p⁺-type isolation region should just be provided so thatadjacent n-type CCD channel regions may not contact with each other, forexample, the p⁺-type isolation regions 162 and 163 can also bedisplacedly arranged in an X₂ direction from the arrangement shown inFIG. 7.

Between the p-type pillar-shaped semiconductor layers of a first row ofsolid-state image sensors in which the solid-state image sensors havingthe photodiodes 151 and 152 are arranged in the horizontal (X₂-X₂′)direction (row direction) and the p-type pillar-shaped semiconductorlayers of a second row of solid-state image sensors in which thesolid-state image sensors having the photodiodes 149 and 150 arearranged in the horizontal direction, transfer electrodes 146, 145, and144 for vertically transferring the signal charges read from thephotodiodes into the n-type CCD channel regions 159, 160, and 161 areprovided. Moreover, between the p-type pillar-shaped semiconductorlayers of the second row of solid-state image sensors in which thesolid-state image sensors having the photodiodes 149 and 150 arearranged in the horizontal direction and the p-type pillar-shapedsemiconductor layers of a third row of solid-state image sensors inwhich the solid-state image sensors having the photodiodes 147 and 148are arranged in the horizontal direction, transfer electrodes 143, 142,and 141 are provided. When the read signal is applied to the transferelectrode 143, the signal charges accumulated in the photodiodes 149 and150 will be read into the n-type CCD channel regions 160 and 161 throughthe read channel. The transfer electrode is horizontally extendedbetween the p-type pillar-shaped semiconductor layers arranged in matrixform.

Incidentally, the photodiode 147 is composed of the p⁺-type region 153and the n-type photoelectric conversion region 166, while the photodiode148 is composed of the p⁺-type region 154 and the n-type photoelectricconversion region 167.

FIG. 8 is a cross-sectional view taken from line X₂-X₂′ shown in FIG. 7,and FIG. 9 is a cross-sectional view taken from line Y₂-Y₂′ in FIG. 7.

The solid-state image sensor of the second row and the first column inFIG. 7 will be described. A p-type well region 165 is formed on ann-type substrate 164, and a p-type pillar-shaped semiconductor layer 181is further formed on the p-type well region 165. An n-type photoelectricconversion region 168 in which the amount of charge is changed by lightis formed on the top of a p-type pillar-shaped semiconductor layer 181,and a p⁺-type region 155 is further formed on the surface of the n-typephotoelectric conversion region 168, while being spaced apart from thetop end of the p-type pillar-shaped semiconductor layer 181 by apredetermined distance. The photodiode 149 is formed of the p⁺-typeregion 155 and the n-type photoelectric conversion region 168. Moreover,the transfer electrodes 143 and 144 are formed on the side of the p-typepillar-shaped semiconductor layer via a gate insulating film 185. Then-type CCD channel region 160 is formed below the transfer electrodes143 and 144. A read channel 182 is formed in a region between the n-typephotoelectric conversion region 168 on the top of the p-typepillar-shaped semiconductor layer 181 and the n-type CCD channel region160.

Subsequently, the solid-state image sensor of the second row and thesecond column in FIG. 7 will be described. The p-type well region 165 isformed on the n-type substrate 164, and a p-type pillar-shapedsemiconductor layer 183 is further formed on the p-type well region 165.An n-type photoelectric conversion region 169 in which the amount ofcharge is changed by light is formed on the top of the p-typepillar-shaped semiconductor layer 183, and a p⁺-type region 156 isfurther formed on the surface of the n-type photoelectric conversionregion 169, while being spaced apart from the top end of the p-typepillar-shaped semiconductor layer 183 by a predetermined distance. Thelight receiving portion (photodiode) 150 is formed of the p⁺-type region156 and the n-type photoelectric conversion region 169. Moreover, thetransfer electrodes 143 and 144 are formed on the side of the p-typepillar-shaped semiconductor layer 183 via a gate insulating film 186.The n-type CCD channel region 161 is formed below the transferelectrodes 143 and 144. A read channel 184 is formed in a region betweenthe n-type photoelectric conversion region 169 on the top of the p-typepillar-shaped semiconductor layer 183 and the n-type CCD channel region161.

A metal shield film 170 is connected to the p⁺-type regions 155, 156,153 and 157. An oxide film 180 is formed as an interlayer insulationfilm between respective components. Moreover, p⁺-type isolation regions162 and 163 are provided so that the n-type CCD channel regions may beisolated not to contact with each other. Although the p⁺-type isolationregions 162 and 163 are provided along the axes of the first and secondcolumns of solid-state image sensors and the outer edges of the p-typepillar-shaped semiconductor layers in the present embodiment, p⁺-typeisolation region should just be provided so that adjacent n-type CCDchannel regions may not contact with each other, for example, thep⁺-type isolation regions 162 and 163 can also be displacedly arrangedin an X₂ direction from the arrangement shown in FIG. 7. Incidentally,the photodiode 151 is composed of the p⁺-type region 157 and the n-typephotoelectric conversion region 172.

As described above, the transfer electrodes 141, 142, 143, 144, 145, and146 extending in the row direction are provided between the p-typepillar-shaped semiconductor layers of the adjacent rows of solid-stateimage sensors so as to pass through between the p-type pillar-shapedsemiconductor layers of the adjacent rows of solid-state image sensor,and they are arranged spaced apart from each other by a predetermineddistance. The transfer electrodes 141, 143, 144, and 146 adjacent to thep-type pillar-shaped semiconductor layers are formed on the side of thep-type pillar-shaped semiconductor layers via the gate oxide film. Thetransfer electrodes 141, 142, 143, 144, 145, and 146 constitute avertical charge transfer device (VCCD) for vertically transferring thesignal charges generated in the photodiodes along with the n-type CCDchannel regions. The VCCD is driven in three phases (Φ1-Φ3), and thesignal charges generated in the photodiodes are vertically transferredby the three transfer electrodes driven with different phases withrespect to each photodiode. Although the VCCD is driven in three phasesin the present embodiment, it will be clear to those skilled in the artthat the VCCD can also have the configuration driven by any appropriatenumber of phases.

Although the solid-state image sensing device in which the CCDsolid-state image sensors are arranged in matrix form has been shown inthe second embodiment, the CCD solid-state image sensors may be arrangedin honeycomb form as shown in FIGS. 10, 11, 12, and 13. Accordingly, asthe third embodiment of the present invention, the solid-state imagesensing device in which the CCD solid-state image sensors of the firstembodiment are arranged in honeycomb form will be described. Aperspective view and a plan view of a part of the solid-state imagesensing device in which the CCD solid-state image sensors are arrangedin honeycomb form are shown in FIGS. 10 and 11, respectively.

In FIGS. 10 and 11, the solid-state image sensors having photodiodes(PDs) 236 and 231 respectively including p⁺-type regions 228 and 223 arearranged on the semiconductor substrate, at a predetermined spacing (avertical pixel pitch VP) and in the vertical (Y₃-Y₃′) direction (columndirection) (the first column of solid-state image sensors). While beingspaced apart from the first column of solid-state image sensors by onehalf of the same spacing (horizontal pixel pitch HP) as the verticalpixel pitch, the solid-state image sensor having photodiodes 234 and 239respectively including p⁺-type regions 226 and 221 are arranged in thevertical direction at the same predetermined spacing as that of thefirst column of solid-state image sensors and they are displacedlyarranged by one half of the vertical pixel pitch VP in the verticaldirection with respect to the first column of solid-state image sensors(the second column of solid-state image sensors). Furthermore, whilebeing spaced apart from the second column of solid-state image sensorsby one half of the same spacing (horizontal pixel pitch HP) as thevertical pixel pitch, the solid-state image sensor having photodiodes237 and 232 respectively including p⁺-type regions 229 and 224 arearranged in the vertical direction at the same predetermined spacing asthat of the first column of solid-state image sensors and they aredisplacedly arranged by one half of the vertical pixel pitch VP in thevertical direction with respect to the second column of solid-stateimage sensors (a third column of solid-state image sensors). Similarly,while being spaced apart from the third column of solid-state imagesensors by one half of the same spacing (horizontal pixel pitch HP) asthe vertical pixel pitch, the solid-state im age sensor havingphotodiodes 235 and 240 respectively including p⁺-type regions 227 and222 are arranged in the vertical direction at the same spacing as thatof the first column of solid-state image sensors, and they aredisplacedly arranged by one half of the vertical pixel pitch VP in thevertical direction with respect to the third column of solid-state imagesensors (a fourth column of solid-state image sensors); and while beingspaced apart from the fourth column of solid-state image sensors by onehalf of the same spacing (horizontal pixel pitch HP) as the verticalpixel pitch, the solid-state image sensor having photodiodes 238 and 233respectively including p⁺-type regions 230 and 225 are arranged in thevertical direction at the same spacing as that of the first column ofsolid-state image sensors, and they are displacedly arranged by one halfof the vertical pixel pitch VP in the vertical direction with respect tothe fourth column of solid-state image sensors (a fifth column ofsolid-state image sensors). In other words, the solid-state imagesensors having the photodiodes 236, 231, 234, 239, 237, 232, 235, 240,238, and 233 are arranged in so-called honeycomb form.

Between the p-type pillar-shaped semiconductor layer of the first columnof solid-state image sensors and the p-type pillar-shaped semiconductorlayers of the second column of solid-state image sensors which areadjacently arranged, the n-type CCD channel region 207 which reads andvertically transfers the signal charges generated in the photodiodes 236and 231 is provided. Similarly, between the p-type pillar-shapedsemiconductor layer of the second column of solid-state image sensors,and the p-type pillar-shaped semiconductor layer of the third column ofsolid-state image sensors, between the p-type pillar-shapedsemiconductor layer of the third column of solid-state image sensors,and the p-type pillar-shaped semiconductor layer of the fourth column ofsolid-state image sensors, and between the p-type pillar-shapedsemiconductor layer of the fourth column of solid-state image sensors,and the p-type pillar-shaped semiconductor layer of the fifth column ofsolid-state image sensors, an n-type CCD channel region 208 which readsand vertically transfers the signal charges generated in the photodiodes234 and 239, an n-type CCD channel region 209 which reads and verticallytransfers the signal charges generated in the photodiodes 237 and 232,and an n-type CCD channel region 210 which reads and verticallytransfers the signal charges generated in the photodiodes 235 and 240are provided, respectively. These n-type CCD channel regions areextended in the vertical direction while snaking through between thep-type pillar-shaped semiconductor layers arranged in honeycomb form.Moreover, p⁺-type isolation regions 213, 214, 215, and 216 are providedso that the n-type CCD channel regions may be isolated not to contactwith each other. Although the p⁺-type isolation regions 213, 214, 215,and 216 are provided along the axes of the first through fifth columnsof solid-state image sensors and the outer edges of the p-typepillar-shaped semiconductor layers in the present embodiment, thep⁺-type isolation region should just be provided so that adjacent n-typeCCD channel regions may not contact with each other, for example, thep⁺-type isolation regions 213, 214, 215, and 216 can also be displacedlyarranged in the X₃ direction from the arrangement shown in FIG. 11.

Between the p-type pillar-shaped semiconductor layers of the first rowof solid-state image sensors in which the solid-state image sensorshaving the photodiodes 236, 237, and 238 are arranged in the horizontal(X₃-X₃′) direction (in the row direction), and the p-type pillar-shapedsemiconductor layers of the second row of solid-state image sensors inwhich the solid-state image sensors having the photodiodes 234 and 235are arranged in the horizontal direction, transfer electrodes 206 and205 are provided. Similarly, between the p-type pillar-shapedsemiconductor layers of the second row of solid-state image sensor inwhich the solid-state image sensors having the photodiodes 234 and 235are arranged in the horizontal direction, and the p-type pillar-shapedsemiconductor layers of the third row of solid-state image sensors inwhich the solid-state image sensors having the photodiodes 231, 232, and233 are arranged in the horizontal direction, and between the p-typepillar-shaped semiconductor layers of the third row of solid-state imagesensors in which the solid-state image sensors having the photodiodes231, 232, and 233 are arranged in the horizontal direction, and thep-type pillar-shaped semiconductor layers of the fourth row ofsolid-state image sensors in which the solid-state image sensors havingthe photodiodes 239 and 240 are arranged in the horizontal direction,transfer electrodes 204, 203 and the transfer electrodes 202, 201 areprovided, respectively. These transfer electrodes are extended in thehorizontal direction while snaking through between the p-typepillar-shaped semiconductor layers arranged in honeycomb form.

Incidentally, the photodiode 239 is composed of the p⁺-type region 221and the n-type photoelectric conversion region 217, and the photodiode240 is composed of the p⁺-type region 222 and the n-type photoelectricconversion region 218.

FIG. 12 is a cross-sectional view taken from line X₃-X₃′ in FIG. 11,while FIG. 13 is a cross-sectional view taken from line Y₃-Y₃′ in FIG.11.

The solid-state image sensor of the second row and the first column inFIG. 11 will be described. A p-type well region 212 is formed on ann-type substrate 211, and a p-type pillar-shaped semiconductor layer 251is further formed on the p-type well region 212. An n-type photoelectricconversion region 242 in which the amount of charge is changed by lightis formed on the top of a p-type pillar-shaped semiconductor layer 251,and the p⁺-type region 226 is further formed on the surface of then-type photoelectric conversion region 242, while being spaced apartfrom the top end of the p-type pillar-shaped semiconductor layer 251 bya predetermined distance. Moreover, the transfer electrodes 204 and 205are formed on the side of the p-type pillar-shaped semiconductor layer251 via a gate insulating film 255. The n-type CCD channel region 208 isformed below the transfer electrodes 204 and 205. A read channel 252 isformed in a region between the n-type photoelectric conversion region242 on the top of the p-type pillar-shaped semiconductor layer 251 andthe n-type CCD channel region 208.

Subsequently, the solid-state image sensor of the second row and thefourth column in FIG. 11 will be described. The p-type well region 212is formed on the n-type substrate 211, and a p-type pillar-shapedsemiconductor layer 253 is further formed on the p-type well region 212.An n-type photoelectric conversion region 243 in which the amount ofcharge is changed by light is formed on the top of the p-typepillar-shaped semiconductor layer 253, and the p⁺-type region 227 isfurther formed on the surface of the n-type photoelectric conversionregion 243, while being spaced apart from the top end of the p-typepillar-shaped semiconductor layer by a predetermined distance. Moreover,the transfer electrodes 204 and 205 are formed on the side of the p-typepillar-shaped semiconductor layer 253 via a gate insulating film 256.The n-type CCD channel region 210 is formed below the transferelectrodes 204 and 205. A read channel 254 is formed in a region betweenthe n-type photoelectric conversion region 243 on the top of the p-typepillar-shaped semiconductor layer 253 and the n-type CCD channel region210.

Moreover, p⁺-type isolation regions 213, 214, 215, and 216 are providedso that the n-type CCD channel regions may be isolated not to contactwith each other. Although the p⁺-type isolation regions 213, 214, 215,and 216 are provided along the axes of the first through fifth columnsof solid-state image sensor and the outer edges of the p-typepillar-shaped semiconductor layers in the present embodiment, thep⁺-type isolation region should just be provided so that adjacent n-typeCCD channel regions may not contact with each other, for example, thep⁺-type isolation regions 213, 214, 215, and 216 can also be displacedlyarranged in an X₃ direction from the arrangement shown in FIG. 11.

As described above, the transfer electrodes 201, 202, 203, 204, 205, and206 extending in the row direction are provided between the p-typepillar-shaped semiconductor layers of the adjacent rows of solid-stateimage sensors so as to pass through between the p-type pillar-shapedsemiconductor layers of the adjacent rows of solid-state image sensors.The transfer electrodes 201, 202, 203, 204, 205, and 206 are formed onthe sides of the p-type pillar-shaped semiconductor layers via the gateoxide film, and are arranged spaced apart from each other by apredetermined distance. The transfer electrodes 201, 202, 203, 204, 205,and 206 constitute a vertical charge transfer device (VCCD) forvertically transferring the signal charges generated in the photodiodesalong with the n-type CCD channel regions. The VCCD is driven in fourphases (Φ1-Φ4), and the signal charges generated in the photodiodes arevertically transferred by the four transfer electrodes driven withdifferent phases with respect to each photodiode. Although the VCCD isdriven in four phases in the present those skilled in the art that theVCCD can also have the configuration driven by any appropriate number ofphases.

The surfaces of the transfer electrodes 201, 202, 203, 204, 205, and 206are covered with an oxide film (planarized film) 250, and a metal shieldfilm 241 is formed on the oxide film. The metal shield film 241 has acircle-like opening portion for every photodiode as a light transmissionportion for transmitting light received by the p⁺-type region acting asa light receiving portion.

Note herein that, although it is not shown in the drawing, a colorfilter, a microlens, and the like are formed on the above metal shieldfilm via a protective film or the planarized film in a manner similar tothat of a usual CCD image sensor.

Next, an example of a manufacturing process for forming the solid-stateimage sensor and the solid-state image sensing device according to theembodiment of the present invention will be described with reference toFIGS. 14 through 30.

In FIGS. 14 through 30, drawing symbols (a) and (b) correspond to theX₂-X₂′ cross-section and the Y₂-Y₂′ cross-section of FIG. 7,respectively.

The p-type well region 165 is formed on the silicon n-type substrate164, and the n-type region 301 is formed on the top of the p-type wellregion 165, and then the p⁺-type region 302 is formed (FIGS. 14( a) and14(b)).

Next, an oxide film is deposited and etching is performed to form oxidefilm masks 303, 304, 305, and 306 (FIGS. 15( a) and 15(b)).

Silicon is etched to form the pillar-shaped semiconductors 181, 183,307, and 308 (FIGS. 16( a) and 16(b)).

An oxide film 309 is formed for ion channeling prevention upon ionimplantation (FIGS. 17( a) and 17(b)).

A polysilicon 310 is deposited so as to be used as a mask upon ionimplantation and is planarized, and etchback is performed thereto (FIGS.18( a) and 18(b)). Other materials such as a photoresist or the like mayalso be used as a mask material.

Ion implantation is performed to form the p⁺-type regions 155, 156, 153,and 157 (FIGS. 19( a) and 19(b)).

The polysilicon is etched and removed (FIGS. 20( a) and 20(b)).

A nitride film is deposited and etchback is performed to then leave itin the form of sidewall spacers 311, 312, 313, and 314 on thepillar-shaped semiconductor sidewall so as to use it as a mask upon ionimplantation (FIGS. 21( a) and 21(b)).

An n-type region 315 which will be an n-type CCD channel region later isformed (FIGS. 22( a) and 22(b)).

Photoresists 316, 317, and 318 which are mask materials for forming thep⁺-type isolation regions are formed (FIGS. 23( a) and 23(b)).

Ion implantation is performed to form the p⁺-type isolation regions 162and 163 (FIGS. 24( a) and 24(b)).

The photoresist, the nitride film, and the oxide film are removed inthis order (FIGS. 25( a) and 25(b)).

Gate oxidation is performed to form a gate oxide film 319, and apolysilicon 320 is deposited and planarized, and etchback is performedthereto (FIGS. 26( a) and 26(b)).

Photoresists 321, 322, 323, 324, 325, and 326 for forming the transferelectrodes are formed (FIGS. 27( a) and 27(b)).

The polysilicon is etched to form the transfer electrodes 141, 142, 143,144, 145, and 146 (FIGS. 28( a) and 28(b)).

The photoresist is removed, and an oxide film 180 is deposited andplanarized, and etchback is performed thereto (FIGS. 29( a) and 29(b)).

The metal shield film 170 is deposited and planarized, and etchback isperformed thereto (FIGS. 30( a) and 30(b)).

Although the pillar-shaped semiconductor layer is formed by etching thesemiconductor layer in the above embodiment, the pillar-shapedsemiconductor layer may also be formed by another method, for example,an epitaxial growth.

The pillar-shaped semiconductor layers of the solid-state image sensorand the solid-state image sensing device are formed on the p-type wellregion formed on the n-type substrate in the above embodiment, but it isnot limited to this, and it may also be formed on the silicon layer onan insulating film formed on the substrate (for example, on an SOIsubstrate), for example.

Moreover, although the n-type photoelectric conversion region formed onthe top of the p-type pillar-shaped semiconductor layer is pillar-shapedwith the same diameter as that of the p-type pillar-shaped semiconductorlayer in the above embodiment, it may be formed into any appropriateshapes other than that.

Moreover, the transfer electrode can be composed of an electrodematerial generally used in a semiconductor process or a solid statedevice in the above embodiments. For example, it may include a lowresistivity polysilicon, tungsten (W), molybdenum (Mo), a tungstensilicide (WSi), a molybdenum silicide (MoSi), a titanium silicide(TiSi), a tantalum silicide (TaSi), and a copper silicide (CuSi).Moreover, the transfer electrode may be formed by stacking theseelectrode materials in layers without including the insulating film.

Additionally, the metal shield film may be formed of, for example, ametal film such as aluminum (Al), chromium (Cr), tungsten (W), titanium(Ti), molybdenum (Mo), or the like, an alloy film composed of two ormore kinds of these metals, a multilayered metal film in which two ormore kinds selected from a group including the above metal films and theabove alloy films are combined.

1. A solid-state image sensor, comprising: a first conductivity-typesemiconductor layer; a first conductivity-type pillar-shapedsemiconductor layer overlying the first conductivity-type semiconductorlayer; a second conductivity-type photoelectric conversion region formedon a top of the first conductivity-type pillar-shaped semiconductorlayer, wherein an electric charge in the photoelectric conversion regionis light-reactive; and a highly-concentrated impurity region of thefirst conductivity-type overlying a surface of the secondconductivity-type photoelectric conversion region, thehighly-concentrated impurity region being spaced apart from a top end ofthe first conductivity-type pillar-shaped semiconductor layer by apredetermined distance; a transfer electrode adjacent to a side of thefirst conductivity-type pillar-shaped semiconductor layer and separatedtherefrom by a gate insulating film; a second conductivity-type CCDchannel region underlies the transfer electrode; and a read channelwithin the first conductivity-type pillar-shaped semiconductor layer ina region between the second conductivity-type photoelectric conversionregion and the second conductivity-type CCD channel region.
 2. Asolid-state image sensing device comprising a plurality of solid-stateimage sensors according to claim 1 arranged in a matrix pattern.
 3. Thesolid-state image sensing device according to claim 2, wherein thesecond conductivity-type CCD channel region comprises a secondconductivity-type impurity region extending in a column direction atleast in respective portions between adjacent columns of the firstconductivity-type pillar-shaped semiconductor layers, and an isolationregion comprising highly concentrated impurities of the firstconductivity-type structured so that the respective portions of thesecond conductivity-type CCD channel region are electrically isolatedfrom each other.
 4. The solid-state image sensing device according toclaim 3, wherein a plurality of transfer electrodes including thetransfer electrodes on the side of the first conductivity-typepillar-shaped semiconductor layer extend in a row direction, inrespective portions between adjacent rows of the first conductivity-typepillar-shaped semiconductor layers, and are arranged at a predeterminedspacing so as to transfer a signal charge generated in the solid-stateimage sensor along the second conductivity-type CCD channel region.
 5. Asolid-state image sensing device, wherein a plurality of sets of thecolumns of solid-state image sensors, in which a first column ofsolid-state image sensors having a plurality of solid-state imagesensors according to claim 1 are arranged in a first direction at afirst spacing and a second column of solid-state image sensors having aplurality of solid-state image sensors according to claim 1 are arrangedin the first direction at the first spacing and are displaced by apredetermined amount in the first direction with respect to the firstcolumn of solid-state image sensors and are displacedly arranged at asecond spacing and are displacedly arranged by a predetermined amount inthe first direction at the second spacing.
 6. The solid-state imagesensing device according to claim 5, wherein the secondconductivity-type CCD channel region is composed of a secondconductivity-type impurity region which extends in the column directionpassing through and between respective pillar-shaped semiconductorlayers of the adjacent columns of the first conductivity-typepillar-shaped semiconductor layers, at least in respective portionsbetween the adjacent columns of the pillar-shaped semiconductor layers,and an isolation region comprising highly-concentration impurities ofthe first conductivity-type arranged so that the secondconductivity-type CCD channel regions are electrically isolated fromeach other.
 7. The solid-state image sensing device according to claim6, wherein the transfer electrodes extend in the row direction passingthrough and between respective pillar-shaped semiconductor layers of theadjacent rows of the pillar-shaped semiconductor layers, in respectiveportions between adjacent rows of the pillar-shaped semiconductorlayers, and are arranged at a predetermined spacing so as to transfer asignal charge generated in the solid-state image sensor along the secondconductivity-type CCD channel region.
 8. A solid-state image sensorcomprising: a laterally-oriented semiconductor layer of a firstconductivity-type; a vertically-oriented pillar-shaped semiconductorlayer of the first conductivity-type overlying the semiconductor layer;a photoelectric conversion region of a second conductivity-type overliesan upper surface of the pillar-shaped semiconductor layer, wherein thephotoelectric conversion region comprises a light-reactive electriccharge; and a highly-concentrated impurity region of the firstconductivity-type partially encapsulating the photoelectric conversionregion and spaced apart from an upper end of the pillar-shapedsemiconductor layer by a portion of the photoelectric conversion region;a transfer electrode adjacent to side surfaces of the pillar-shapedsemiconductor layer and separated therefrom by a gate insulating film; aCCD channel region of the second conductivity-type between the transferelectrode the laterally-oriented semiconductor layer; and a read channelwithin the pillar-shaped semiconductor layer in a region intermediate tothe photoelectric conversion region and the CCD channel region.
 9. Thesolid-state image sensing device comprising a plurality of solid-stateimage sensors according to claim 8 and arranged in a matrix pattern oforthogonal rows and columns, wherein the CCD channel region comprises aregion extending in a column direction at least in respective portionsbetween adjacent columns of the pillar-shaped semiconductor layers, andan isolation region comprising highly concentrated impurities of thefirst conductivity-type is structured such that the respective portionsof the CCD channel region are electrically isolated from each other. 10.A solid-state image sensing device comprising a plurality of solid-stateimage sensors according to claim 8 and arranged in a honeycomb patternof rows and columns in which a first column of solid-state image sensorsare arranged in a first direction at a first spacing and a second columnof solid-state image sensors are arranged in the first direction at thefirst spacing and are offset by a predetermined amount in the firstdirection with respect to solid-state image sensors in the first columnand in which a first row of solid-state image sensors are arranged in asecond direction at a the first spacing and a second row of solid-stateimage sensors are arranged in the second direction at the first spacingand are offset by a predetermined amount in the second direction withrespect to solid-state image sensors in the first row.